Chip Switching Diode -
Chip Switching Diode
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Written by CDBAW56 SOT-23
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Friday, 05 September 2008 23:11 |
| | | | | | | | | | | | | | | | | | | | | | Feature | | | | | | | | | | | Mechanical Data. | | | | Silicon Epitaxial Planar Diode. | | | | | | | | Fast switching dual chip diode with anode to cathode. | | | | | | | This diode is also available in other comfigurations figuration including single | | | | | | | with type designation CDMMBD4148, a dual common anode with type | | | | | | | desigantion CDBAV70, and a dual common cathode with type desigantion | | | | | | | CDBAV99 | | Case: SOT23 Plastic Case | | | | Lead (Pd) - free component. | | Weight: approx. 21mg | | | | | | | | | | | | | | | | | Value: CDBAW56 | | | | | | | | | | | | | | | | | | | | | | | | | | Maximum Ratings & Electrical Characteristics Tamb = 25 ℃, unless otherwise noted | | | | | | | | | | | | | | | | | | | | | | | | Parameter | Symbol | Value | Unit | | | Device marking code | | BAV56 | | | | Non repetitive peak reverse voltage | VRM | 100 | V | | | Reprtitive pead reverse voltage | VR = VRRM | 70 | V | | | Forward continuous current | IF | 200 | mA | | | Non repetitive peak forward current | tp = 1 us | IFSM | 2.0 | A | | | tp = 1 ms | 1.0 | | | tp = 1 s | 0.5 | | | Average forward current | IFSM | 1501) | mA | | | Power dissipation | PTOT | 3001) | mW | | | Forward voltage | IF = 1mA | VF | 715 | mV | | | IF = 10mA | 855 | | | IF = 50mA | 1000 | | | IF = 150mA | 1250 | | | Leakage current | VR = 70V | IR | 2.5 | μA | | | VR = 70V, Tj=150℃ | 50 | | | VR = 25V, Tj=150℃ | 30 | | | Thermal resistance junction to ambient air | RthJA | 4301) | K/W | | | Junction temperature | Tj | 150 | ℃ | | | Storage temperature range | Tstg | - 55 to + 150 | ℃ | | | Diode capacitance ( VF = VR = 0, f =1MHZ ) | Ctot | 2 | pF | | | Reverse Recovery time | Trr | 6 | ns | | | ( IF =10mA to IR = 1mA, VR = 6V, RL = 100Ω ) | | | 1) Valid provided that eletrodrs are kept at ambient temperature. | | |
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Last Updated ( Wednesday, 03 June 2009 20:13 )
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