Chip Switching Diode -
Chip Switching Diode
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Written by CDBAV21WS (0805)
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Wednesday, 13 May 2009 20:50 |
High Voltage Chip Switching Diode CD4148 | | | | | CDBAV21WS (0805) | | | | | | | | FEATURE: | | | | ▓ Silicon epitaxial planer diode. | | | | ▓ SMD chip pattern, available in various dimension included 1206 & 0603. | | | | ▓ Lead free and RoHS compliance components. | | | | | | | | | | | MECHANICAL CHARACTERISTICS: | | | | Size : 0805 | | | | Weight: Approx 6.0mg | | | | Marking: 21 as VRRM 250V high voltage switching diode | | | | | | | | MAXIMUM RATING: | | | | | | Parameter at Tamb = 25℃ | Symbol | Value | Unit | Continue Reverse Voltage | VR | 200 | V | Repetitvite Peak Reverse Voltage | VRRM | 250 | V | Non-Repetitive Peak Recerse Voltage | VRSM | 250 | V | Continous Forward Current | IF | 250¹ | mA | Average rectified current sin half wave | IF(AV) | 200¹ | mA | rectification with resistive load. | 200¹ | mA | Repetitive Peak Forward Current at f ≧50HZ, θ = 180°, Tamb = 25℃ | IFRM | 625¹ | mA | Surge Forward Current at t<1s and Tj=25℃ | IFSM | 1000¹ | mA | | | | | | | THERMAL CHARACTERISTICS: | | | | | | Parameter at Tamb = 25℃ | Symbol | Value | Unit | Forwar Power Dissipation | Ptot | 200¹ | mW | Power derating above 25℃ | 1.6 | mW/℃ | Junction Temperature | Tj | 150¹ | ℃ | Thermal Resistance Junction to Ambient air | Roja | 375¹ | ℃/W | Storage Temperature range | Tstg | -55 to 150¹ | ℃ | 1. Valid provided that electrodes are kept at ambient temperature. | | | | | |
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Last Updated ( Wednesday, 03 June 2009 20:11 )
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