14 | 06 | 2009
CDBAV21WS (0805) Print
Chip Switching Diode - Chip Switching Diode
Written by CDBAV21WS (0805)   
Wednesday, 13 May 2009 20:50
Return Back High Voltage Chip Switching Diode CD4148    
 CDBAV21WS (0805)      
    
FEATURE:   
Silicon epitaxial planer diode.   
SMD chip pattern, available in various dimension included 1206 & 0603.   
  Lead free and RoHS compliance components.     
     Dimension
MECHANICAL CHARACTERISTICS:   
Size : 0805   
Weight: Approx 6.0mg   
Marking: 21 as VRRM 250V high voltage switching diode   
    
MAXIMUM RATING:     

Parameter at Tamb = 25

Symbol

Value

Unit

Continue Reverse Voltage

VR

200

V

Repetitvite Peak Reverse Voltage

VRRM

250

V

Non-Repetitive Peak Recerse Voltage

VRSM

250

V

Continous Forward Current

IF

250¹

mA

Average rectified current sin half wave

IF(AV)

200¹

mA

rectification with resistive load.

200¹

mA

Repetitive Peak Forward Current at f 50HZ, θ = 180°, Tamb = 25

IFRM

625¹

mA

Surge Forward Current at t<1s and Tj=25℃

IFSM

1000¹

mA

      
THERMAL CHARACTERISTICS:     

Parameter at Tamb = 25

Symbol

Value

Unit

Forwar Power Dissipation

 Ptot

200¹

mW

Power derating above 25

1.6

mW/

Junction Temperature

Tj

150¹

Thermal Resistance Junction to Ambient air

Roja

375¹

/W

Storage Temperature range

Tstg

-55 to 150¹

1. Valid provided that electrodes are kept at ambient temperature.     

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Last Updated ( Wednesday, 03 June 2009 20:11 )