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Chip Switching Diode -
Chip Switching Diode
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Written by CDBAV21W (1206)
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Thursday, 14 May 2009 20:18 |
 High Voltage Chip Switching Diode CD4148 | | | |  |  CDBAV21W (1206) 200V 0.25A | | | | | | | | | | FEATURE: | | | | | ▓ Silicon epitaxial planer diode. | | | | | ▓ SMD chip pattern, available in various dimension included 0805 & 0603. | | | | | ▓ Lead free and RoHS compliance components. | | | | | | | | | | |  | | MECHANICAL CHARACTERISTICS: | | | | | Size : 1206 | | | | | Weight: Approx 10mg | | | | | Marking: 21 as VRRM 250V high voltage switching diode | | | | | | | | | | MAXIMUM RATING: | | | | | | Parameter at Tamb = 25℃ | Symbol | Value | Unit | Continue Reverse Voltage | VR | 200 | V | Repetitvite Peak Reverse Voltage | VRRM | 250 | V | Non-Repetitive Peak Recerse Voltage | VRSM | 250 | V | Continous Forward Current | IF | 250¹ | mA | Average rectified current sin half wave | IF(AV) | 200¹ | mA | rectification with resistive load. | 200¹ | mA | Repetitive Peak Forward Current at f ≧50HZ, θ = 180°, Tamb = 25℃ | IFRM | 625¹ | mA | Surge Forward Current at t<1s and Tj=25℃ | IFSM | 1000¹ | mA | | | | | | | | | THERMAL CHARACTERISTICS: | | | | | | Parameter at Tamb = 25℃ | Symbol | Value | Unit | Forwar Power Dissipation | Ptot | 400¹ | mW | Power derating above 25℃ | 3.2 | mW/℃ | Junction Temperature | Tj | 150¹ | ℃ | Thermal Resistance Junction to Ambient air | Roja | 375¹ | ℃/W | Storage Temperature range | Tstg | -55 to 150¹ | ℃ | | 1. Valid provided that electrodes are kept at ambient temperature. | | | | | |
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Last Updated ( Wednesday, 03 June 2009 20:10 )
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